PART |
Description |
Maker |
BB-101 |
Baseboard for TMCM-101
|
TRINAMIC Motion Control GmbH & Co. KG.
|
PCE-7210G2-00A1E |
Dual Socket 604 Intel庐 Xeon庐/ LV Xeon庐 Processor Card with PCI Express/IPMI/VGA/Dual GbE LAN Dual Socket 604 Intel? Xeon?/ LV Xeon? Processor Card with PCI Express/IPMI/VGA/Dual GbE LAN
|
Advantech Co., Ltd.
|
PCE-5124 PCE-5124F-00A1E PCE-5124G2-00A1E PCE-5124 |
LGA775 Core?/a> 2 Quad CPU Card with PCI Express / IPMI / VGA/ Dual GbE LAN / 6 COM Ports
|
Advantech Co., Ltd.
|
UNIRS232USB |
The Universal RFID Socket board is the baseboard for the MicroRWD RFID reader modules from IB Technology.
|
rfsolutions.ltd
|
IRFY430M-T257 |
Publications, Books RoHS Compliant: NA N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N沟道功率MOS场效应管,HI-REL应用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)) N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
TT electronics Semelab Limited Semelab(Magnatec) SEME-LAB[Seme LAB]
|
PCA-6194G2-00A1E PCA-6194VG-00A1E |
LGA775 Core?/a> 2 Duo/Pentium? D/Pentium? 4/Celeron? D Processor Card with IPMI/VGA/Dual GbE LAN (FSB 1066/800 MHz) LGA775 Core 2 Duo/Pentium? D/Pentium? 4/Celeron? D Processor Card with IPMI/VGA/Dual GbE LAN (FSB 1066/800 MHz)
|
Advantech Co., Ltd.
|
IRFN140SMD |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET(减振钢板基本:100V的,身份证(续)3.9A,的Rds(on):0.077Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本100V的,身份证(续)3.9A时,RDS(对):0.077Ω))
|
TT electronics Semelab, Ltd. International Rectifier, Corp. Seme LAB
|
ASMB-823I-00A1E |
Dual LGA 2011-R3 Intel? Xeon? E5-2600 v3 ATX Server Board with DDR4, 4 PCIe x16, 6 USB 3.0, SATA3, Dual LAN, IPMI 2.0
|
Advantech Co., Ltd.
|
IRFE9130 |
P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET(减振钢板基本:- 100V的,身份证(续) 6.1A,Vdgr 0.345V)性(P沟道功率马鞍山场效应管(减振钢板基本 100V的,身份证(续) 6.1AVdgr 0.345V))
|
Seme LAB
|
SML50W40 |
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):40A,Rds(on):0.12惟)(N娌??澧?己??楂???????OS?烘?搴??(Vdss:500V,Id(cont):40A,Rds(on):0.12惟)) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
SEME-LAB[Seme LAB] SemeLAB
|
APT1101RSFLL |
Volts:1100V RDS(ON)1Ohms ID(cont):13Amps|FREDFETs ( fast body diode)
|
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